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Sunday, 25 October 2020

Electrical Property of Materials MCQs | Part - V | Material Science MCQs

This set of Engineering Materials Science "Multiple Choice Questions & Answers" are based on "ELECTRICAL PROPERTY" 

Electrical Property of Materials MCQs | Part - V

 


ELECTRICAL PROPERTY


Multiple Choice Questions (MCQ)


Hello reader, here you can find some MCQ with answers. But before reading this I will suggest you take a practice test on these questions given below. so you can understand your strength on this topic.


Click here to go Practice Test section on this topic namely Electrical Property.


But if you want to read this topic first and then practice it then read it carefully.  The Multiple Choice Questions (MCQ) based on Electrical Property are given below:



PART - V



1) For p-type semiconductor majority charge carrier is


Correct Answer is "B"

For p-type semiconductor, the majority charge carrier is a hole



2) For an n-type semiconductor, the Fermi level located


Correct Answer is "D"

For an n-type semiconductor, the Fermi level located in the band gap just below the bottom of the conduction band



3) For a p-type semiconductor, the Fermi level located


Correct Answer is "B"

For a p-type semiconductor, the Fermi level located in the band gap just above the top of the valence band



4) For extrinsic semiconductor the host material have total impurity content in the order of


Correct Answer is "D"

For extrinsic semiconductor, the host material have total impurity content in the order of 10-7



5) At a particular temperature carrier concentration of Ge is _____ that of Si.


Correct Answer is "A"

At a particular temperature carrier concentration of Ge is greater than that of Si due to the smaller bandgap of Ge than Si.



6) The band gap of Si in eV is


Correct Answer is "C"

The bandgap of Si is 1.11 eV



7) The bandgap of Ge in eV is


Correct Answer is "B"

The bandgap of Ge is 0.67 eV



8) N-type germanium is obtained on doping intrinsic germanium by


Correct Answer is "C"

N-type germanium is obtained on doping intrinsic germanium by phosphorus



9) Depletion region is a zone which contains


Correct Answer is "D"

The depletion region is a zone which contains neither electrons nor holes



10) In a semiconductor diode arrow represents


Correct Answer is "A"

In a semiconductor, the diode arrow represents P-type material



Do you read all the questions and answers given above carefully? let's make a practice on all the questions given above.
Go to:  Practice Test on Electrical Property (MCQ)


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